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HSB857 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HSB857 datasheet PDF. This datasheet also covers the HSB857_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

Low frequency power amplifier.

Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TC=25°C) 40 W Maximum Voltages and Currents BVC

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Note: The manufacturer provides a single datasheet file (HSB857_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HSB857
Manufacturer Hi-Sincerity Mocroelectronics
File Size 40.02 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HSB857 Datasheet

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Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
HSB857D PNP EPITAXIAL PLANAR TRANSISTOR
HSB1109 PNP EPITAXIAL PLANAR TRANSISTOR
HSB1109S PNP EPITAXIAL PLANAR TRANSISTOR
HSB1426 PNP EPITAXIAL PLANAR TRANSISTOR
HSB562 PNP EPITAXIAL PLANAR TRANSISTOR

Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HSB857 / 2SB857 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6705 Issued Date : 1995.01.27 Revised Date : 2005.10.07 Page No. : 1/4 Description Low frequency power amplifier. Absolute Maximum Ratings (TA=25°C) TO-220 • Maximum Temperatures Storage Temperature ........................................................................................................................... -50 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C) ....................................................................................................................
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