| Part number | HSB1109S |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 51.21 KB |
| Description | PNP EPITAXIAL PLANAR TRANSISTOR |
| Datasheet |
 HSB1109S Datasheet
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| Note |
This datasheet PDF includes multiple part numbers: HSB1109S, HSB1109S_Hi. Please refer to the document for exact specifications by model. |
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The HSB1109S is designed for low frequency and high voltage amplifier applications complementary pair with HSD1609S. Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) 900 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage
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