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HSB124 - Silicon Epitaxial Planar Diode for High Speed Switching

Key Features

  • Low reverse current. (I R= 0.01 µAmax).
  • CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSB124S Laser Mark A1 Package Code CMPAK Outline 3 2 1 1 Cathode 2 Anode 3 Cathode Anode (Top View) HSB124S Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Not.

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HSB124S Silicon Epitaxial Planar Diode for High Speed Switching
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HSB124S Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-488A(Z) Rev 1 Dec. 1999 Features • Low reverse current.(I R= 0.01 µAmax) • CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSB124S Laser Mark A1 Package Code CMPAK Outline 3 2 1 1 Cathode 2 Anode 3 Cathode Anode (Top View) HSB124S Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note: Note: Symbol VRM VR I FM *1 *2 Value 85 80 300 4 100 125 -55 to +125 Unit V V mA A mA °C °C I FSM I O*1 Tj Tstg 1. Two device total. 2. Value at duration of 1 µsec, two device total.