Datasheet Details
| Part number | HSB857D |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 33.86 KB |
| Description | PNP EPITAXIAL PLANAR TRANSISTOR |
| Datasheet |
|
|
|
|
Download the HSB857D datasheet PDF. This datasheet also covers the HSB857D_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.
Low frequency power amplifier.
Spec.
No.
Maximum Temperatures Storage Temperature -50~+150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipatio| Part number | HSB857D |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 33.86 KB |
| Description | PNP EPITAXIAL PLANAR TRANSISTOR |
| Datasheet |
|
|
|
|
| Part Number | Description | Manufacturer |
|---|---|---|
| HSB83 | Silicon Epitaxial Planar Diode for High Voltage Switching | Hitachi Semiconductor |
| HSB83YP | Silicon Epitaxial Planar Diode for High Voltage Switching | Hitachi Semiconductor |
| HSB88AS | Silicon Schottky Barrier Diode | Renesas |
| HSB88AS | Silicon Schottky Barrier Diode | Hitachi |
| HSB88WA | Silicon Schottky Barrier Diode | Renesas |
| Part Number | Description |
|---|---|
| HSB857 | PNP EPITAXIAL PLANAR TRANSISTOR |
| HSB1109 | PNP EPITAXIAL PLANAR TRANSISTOR |
| HSB1109S | PNP EPITAXIAL PLANAR TRANSISTOR |
| HSB1426 | PNP EPITAXIAL PLANAR TRANSISTOR |
| HSB562 | PNP EPITAXIAL PLANAR TRANSISTOR |