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HSC945SP - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HSC945SP datasheet PDF. This datasheet also covers the HSC945SP_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HSC945 is designed for using driver stage of AF amplifier and low speed switching applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipations Total Power Dissipation (Ta=25°C)

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Note: The manufacturer provides a single datasheet file (HSC945SP_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HSC945SP
Manufacturer Hi-Sincerity Mocroelectronics
File Size 29.24 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HSC945SP Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HSP200201 Issued Date : 1998.01.06 Revised Date : 2002.01.25 Page No. : 1/4 HSC945SP NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC945 is designed for using driver stage of AF amplifier and low speed switching applications. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum • Maximum Power Dissipations Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage...
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