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HSC945 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HSC945 datasheet PDF. This datasheet also covers the HSC945_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HSC945 is designed for using driver stage of AP amplifier and low speed switching applications.

Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta

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Note: The manufacturer provides a single datasheet file (HSC945_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HSC945
Manufacturer Hi-Sincerity Mocroelectronics
File Size 36.26 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HSC945 Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6517 Issued Date : 1995.02.11 Revised Date : 2002.12.16 Page No. : 1/4 HSC945 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC945 is designed for using driver stage of AP amplifier and low speed switching applications. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 °C Junction Temperature ...................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................
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