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HSC1959 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HSC1959 datasheet PDF. This datasheet also covers the HSC1959_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HSC1959 is designed for audio frequency Low power amplifier applications.

Features

  • Excellent hFE Linearity TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 500 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HSC1959_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HSC1959
Manufacturer Hi-Sincerity Mocroelectronics
File Size 51.98 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HSC1959 Datasheet

Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HSC1959 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6524 Issued Date : 1993.01.15 Revised Date : 2005.02.14 Page No. : 1/5 Description The HSC1959 is designed for audio frequency Low power amplifier applications. Features • Excellent hFE Linearity TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ..................................................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) .................................................................................
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