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HSC1959SP - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HSC1959SP datasheet PDF. This datasheet also covers the HSC1959SP_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HSC1959Y is designed for audio frequency Low power amplifier applications.

Features

  • Execellent hFE linearity.
  • Complementary to HSA562 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 500 mW.
  • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage 35 V VCEO Collector to Emitter Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HSC1959SP_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HSC1959SP
Manufacturer Hi-Sincerity Mocroelectronics
File Size 27.21 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HSC1959SP Datasheet

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Part Number Description
HSC1959 NPN EPITAXIAL PLANAR TRANSISTOR
HSC1815 NPN EPITAXIAL PLANAR TRANSISTOR
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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HSP200203 Issued Date : 1998.01.06 Revised Date : 2002.03.04 Page No. : 1/3 HSC1959SP NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC1959Y is designed for audio frequency Low power amplifier applications. Features • Execellent hFE linearity • Complementary to HSA562 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ...................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................
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