Download the HMBT9014 datasheet PDF.
This datasheet also covers the HMBT9014_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.
Description
The HMBT9014 is designed for use in pre-amplifier of low level and low noise.
Features
- High Total Power Dissipation (PD: 225mW).
- Complementary to HMBT9015.
- High hFE and Good Linearity
SOT-23
Absolute Maximum Ratings.
- Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
- Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW
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- Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage 50 V VCEO Collector to Emitter Voltage 45 V VEBO Emitte.