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HMBT2222A - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HMBT2222A datasheet PDF. This datasheet also covers the HMBT2222A_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HMBT2222A is designed for general purpose amplifier and high-speed switching, medium-power switching applications.

Features

  • High frequency current gain.
  • High Speed Switching SOT-23 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C.
  • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 225 mW.
  • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage 75.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMBT2222A_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HMBT2222A
Manufacturer Hi-Sincerity Mocroelectronics
File Size 37.18 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HMBT2222A Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6822 Issued Date : 1993.06.30 Revised Date : 2002.10.25 Page No. : 1/4 HMBT2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT2222A is designed for general purpose amplifier and high-speed switching, medium-power switching applications. Features • High frequency current gain • High Speed Switching SOT-23 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................... -55 ~ +150 °C Junction Temperature.................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ..................................................................
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