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HMBT5551 - NPN Transistor

Download the HMBT5551 datasheet PDF. This datasheet also covers the HMBT5551_Hi variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HMBT5551 is designed for general purpose applications requiring high Breakdown Voltages.

Maximum Temperatures Storage Temperature -55 + 150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C)

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMBT5551_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HMBT5551
Manufacturer Hi-Sincerity Mocroelectronics
File Size 40.89 KB
Description NPN Transistor
Datasheet download datasheet HMBT5551 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HMBT5551 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6838 Issued Date : 1994.07.29 Revised Date : 2004.09.07 Page No. : 1/4 Description The HMBT5551 is designed for general purpose applications requiring high Breakdown Voltages. Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature............................................................................................................................. -55 + 150 °C Junction Temperature................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C)....................................................................................................
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