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HMBT5401 - PNP Transistor

Download the HMBT5401 datasheet PDF. This datasheet also covers the HMBT5401_Hi variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HMBT5401 is designed for general purpose applications requiring high breakdown voltages.

Features

  • High Collector-Emitter Breakdown Voltage (BVCEO=150V@IC=1mA).
  • Complements to NPN Type HMBT5551 SOT-23 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to B.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMBT5401_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HMBT5401
Manufacturer Hi-Sincerity Mocroelectronics
File Size 38.75 KB
Description PNP Transistor
Datasheet download datasheet HMBT5401 Datasheet

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Other Datasheets by Hi-Sincerity Mocroelectronics

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HMBT5401 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6819 Issued Date : 1993.06.30 Revised Date : 2004.09.07 Page No. : 1/4 Description The HMBT5401 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage (BVCEO=150V@IC=1mA) • Complements to NPN Type HMBT5551 SOT-23 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ...................................................................................................................
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