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HMBT5086 - PNP Transistor

Download the HMBT5086 datasheet PDF. This datasheet also covers the HMBT5086_Hi variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HMBT5086 is designed for low noise, high gain, general purpose amplifier applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMBT5086_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HMBT5086
Manufacturer Hi-Sincerity Mocroelectronics
File Size 37.01 KB
Description PNP Transistor
Datasheet download datasheet HMBT5086 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HMBT5086 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6849 Issued Date : 1994.07.29 Revised Date : 2004.09.08 Page No. : 1/4 Description The HMBT5086 is designed for low noise, high gain, general purpose amplifier applications. Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ....................................................................................................
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