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HJ6718 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HJ6718 datasheet PDF. This datasheet also covers the HJ6718_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HJ6718 is designed for general purpose medium power amplifier and switching .

Features

  • High power: 1.2W.
  • High current: 1A Absolute Maximum Ratings (Ta=25°C).
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C.
  • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 20 W.
  • Maximum Voltages and Currents BVCBO Collector to Base Voltage 100 V BVCEO Collector to Emitter Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HJ6718_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HJ6718
Manufacturer Hi-Sincerity Mocroelectronics
File Size 22.68 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HJ6718 Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830-A Issued Date : 1994.01.25 Revised Date : 2000.11.01 Page No. : 1/2 HJ6718 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ6718 is designed for general purpose medium power amplifier and switching . Features • High power: 1.2W • High current: 1A Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ....................................................................................
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