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HJ667A - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HJ667A datasheet PDF. This datasheet also covers the HJ667A_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HJ667A is designed for low frequency power amplifier.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (TC=25°C) 20 W Maximum Volta

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Note: The manufacturer provides a single datasheet file (HJ667A_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HJ667A
Manufacturer Hi-Sincerity Mocroelectronics
File Size 76.21 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HJ667A Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HJ667A PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2008.04.09 Page No. : 1/3 Description The HJ667A is designed for low frequency power amplifier. Absolute Maximum Ratings (TA=25°C) TO-252 • Maximum Temperatures Storage Temperature .......................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (TC=25°C) ....................................................................................................................
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