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HJ649A - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HJ649A datasheet PDF. This datasheet also covers the HJ649A_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HJ649A is designed for low frequency power amplifier.

Spec.

No.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maxim

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HJ649A_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HJ649A
Manufacturer Hi-Sincerity Mocroelectronics
File Size 27.71 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HJ649A Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HJ649A PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ649A is designed for low frequency power amplifier. Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2002.04.03 Page No. : 1/3 Absolute Maximum Ratings (Ta=25°C) TO-252 • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ..................................................................................... 20 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage............................
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