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HJ6668 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HJ6668 datasheet PDF. This datasheet also covers the HJ6668_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HJ6668 is designed for general-purpose amplifier and switching applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 65 W

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Note: The manufacturer provides a single datasheet file (HJ6668_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HJ6668
Manufacturer Hi-Sincerity Mocroelectronics
File Size 31.80 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HJ6668 Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1999.03.01 Revised Date : 2000.11.01 Page No. : 1/3 HJ6668 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ6668 is designed for general-purpose amplifier and switching applications. Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) .................................................................................... 65 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage ...........
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