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HJ127 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HJ127 datasheet PDF. This datasheet also covers the HJ127_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

TO-252 High DC current gain Built-in a damper diode at E-C Darlington Schematic C Absolute Maximum Ratings (TA=25°C) Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C B R1 R2 E Maximum Power Dissipation Total Power Dis

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Note: The manufacturer provides a single datasheet file (HJ127_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HJ127
Manufacturer Hi-Sincerity Mocroelectronics
File Size 92.01 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HJ127 Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HJ127 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6017 Issued Date : 1996.04.12 Revised Date : 2008.04.09 Page No. : 1/4 Description TO-252 • High DC current gain • Built-in a damper diode at E-C Darlington Schematic C Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature .................................................................. -55 ~ +150 °C Junction Temperature .......................................................................... +150 °C B R1 R2 E • Maximum Power Dissipation Total Power Dissipation (TC=25°C) .................................................................................................................... 20 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage .............
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