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HJ112 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HJ112 datasheet PDF. This datasheet also covers the HJ112_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HJ112 is designed for use in general purpose amplifier and low-speed switching applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum Maximum Power Dissipation Total Power Dissi

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Note: The manufacturer provides a single datasheet file (HJ112_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HJ112
Manufacturer Hi-Sincerity Mocroelectronics
File Size 104.24 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HJ112 Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HJ112 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6030 Issued Date : 1998.07.01 Revised Date : 2006.04.09 Page No. : 1/5 Description The HJ112 is designed for use in general purpose amplifier and low-speed switching applications. Absolute Maximum Ratings (TA=25°C) TO-252 • Maximum Temperatures Storage Temperature .......................................................................................................................... -55 ~ +150 °C Junction Temperature .................................................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C) ........................................................................................
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