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HJ122 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HJ122 datasheet PDF. This datasheet also covers the HJ122_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HJ122 is designed for use in general purposes and low speed switching applications.

Features

  • High DC current gain.
  • Built-in a damper diode at E-C Absolute Maximum Ratings (TA=25°C) B R1 R2 E.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C.
  • Maximum Power Dissipation Total Power Dissipation (TC=25°C) 20 W.
  • Maximum Voltages and Currents (TA=25°C) BVCBO Colle.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HJ122_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HJ122
Manufacturer Hi-Sincerity Mocroelectronics
File Size 95.62 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HJ122 Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HJ122 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6009 Issued Date : 1996.02.03 Revised Date :2008.04.09 Page No. : 1/5 Description TO-252 The HJ122 is designed for use in general purposes and low speed switching applications. Darlington Schematic C Features • High DC current gain • Built-in a damper diode at E-C Absolute Maximum Ratings (TA=25°C) B R1 R2 E • Maximum Temperatures Storage Temperature .......................................................................................................................... -55 ~ +150 °C Junction Temperature ...................................................................................................................................
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