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HJ1109 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HJ1109 datasheet PDF. This datasheet also covers the HJ1109_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

Low frequency high voltage amplifier.

Complementary pair with HJ1609.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 1.25 W

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Note: The manufacturer provides a single datasheet file (HJ1109_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HJ1109
Manufacturer Hi-Sincerity Mocroelectronics
File Size 31.23 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HJ1109 Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6019-B Issued Date : 1996.04.15 Revised Date : 2000.11.01 Page No. : 1/3 HJ1109 PNP EPITAXIAL PLANAR TRANSISTOR Description • Low frequency high voltage amplifier. • Complementary pair with HJ1609. Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................. 1.25 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage ..................
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