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HI31C - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HI31C, a member of the HI31C_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Description

The HI31C is designed for use in general purpose amplifier and switching applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 1

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Datasheet Details

Part number HI31C
Manufacturer Hi-Sincerity Mocroelectronics
File Size 65.40 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HI31C Datasheet
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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9001 Issued Date : 1996.02.28 Revised Date : 2002.03.04 Page No. : 1/3 HI31C NPN EPITAXIAL PLANAR TRANSISTOR Description The HI31C is designed for use in general purpose amplifier and switching applications. Absolute Maximum Ratings (Ta=25°C) TO-251 • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) .....................................................................................
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