HI32C - PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HI32C, a member of the HI32C_Hi PNP EPITAXIAL PLANAR TRANSISTOR family.

Description

The HI32C is designed for use in general purpose amplifier and low speed switching applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (T

Hi-Sincerity Mocroelectronics

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Datasheet Details

Part number	HI32C
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	60.07 KB
Description	PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	HI32C Datasheet
Additional preview pages of the HI32C datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9002 Issued Date : 1994.03.02 Revised Date : 2002.01.17 Page No. : 1/3 HI32C PNP EPITAXIAL PLANAR TRANSISTOR Description The HI32C is designed for use in general purpose amplifier and low speed switching applications. Absolute Maximum Ratings (Ta=25°C) TO-251 • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ......................................................................................

Published: May 22, 2007 |