Datasheet4U Logo Datasheet4U.com

HI3669 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HI3669, a member of the HI3669-Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Description

The HI3669 is designed for using in power amplifier applications, power switching application.

Maximum Temperatures Tstg Storage Temperature -55 ~ +150 °C Tj Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipa

📥 Download Datasheet

Datasheet preview – HI3669

Datasheet Details

Part number HI3669
Manufacturer Hi-Sincerity Mocroelectronics
File Size 43.90 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HI3669 Datasheet
Additional preview pages of the HI3669 datasheet.

📁 Similar Datasheet

  • Hi3660 - SoC (HiSilicon)
  • Hi3670 - Application Processor (HiSilicon)
  • HI3-1818A - Low Resistance / Single 8-Channel and Differential 4-Channel CMOS Analog Multiplexers (Intersil Corporation)
  • HI3-5043-5 - CMOS Analog Switches (Intersil)
  • HI3-5051-5 - CMOS Analog Switches (Intersil)
  • HI3-506 - CMOS Analog Multiplexers (Harris)
  • HI3-506A - CMOS Analog Multiplexers (Harris)
  • HI3-506L - CMOS Analog Multiplexers (Harris)
  • HI3-509A - (HI3-506A/HI3-507A/HI3-508A) CMOS Analog Multiplexers (Hrris)
  • HI3-509A - (HI3-508A) Fault-Protected Analog Multiplexer ()
Other Datasheets by Hi-Sincerity Mocroelectronics
  • HI31C - NPN EPITAXIAL PLANAR TRANSISTOR
  • HI32C - PNP EPITAXIAL PLANAR TRANSISTOR

Full PDF Text Transcription

Click to expand full text
HI-SINCERITY MICROELECTRONICS CORP. HI3669 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE9029 Issued Date : 1997.11.14 Revised Date : 2006.02.20 Page No. : 1/4 Description The HI3669 is designed for using in power amplifier applications, power switching application. Absolute Maximum Ratings (TA=25°C) TO-251 • Maximum Temperatures Tstg Storage Temperature.................................................................................................................... -55 ~ +150 °C Tj Junction Temperature ................................................................................................................................ +150 °C • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...................................................................................
Published: |