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HWL34YRF - L-Band GaAs Power FET

Description

The HWL34YRF is a Power GaAs FET designed for various L-band & S-band applications.

It is presently offered in low cost ceramic package.

Features

  • Low Cost GaAs Power FET.
  • Class A or Class AB Operation.
  • Greater than 14.5 dB Gain.
  • 5V to 10V Operation.

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Datasheet Details

Part number HWL34YRF
Manufacturer Hexawave
File Size 87.96 KB
Description L-Band GaAs Power FET
Datasheet download datasheet HWL34YRF Datasheet

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Full PDF Text Transcription

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Features • Low Cost GaAs Power FET • Class A or Class AB Operation • Greater than 14.5 dB Gain • 5V to 10V Operation Description The HWL34YRF is a Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package. Absolute Maximum Ratings VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current IG Gate Current TCH Channel Temperature TSTG Storage Temperature PT* Power Dissipation * mounted on an infinite heat sink.
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