Datasheet4U Logo Datasheet4U.com

HWL30YRA - L-Band GaAs Power FET

Description

The HWL30YRA is a Medium Power GaAs FET designed for various L-band & S-band applications.

It is presently offered in low cost ceramic package.

Features

  • Low Cost GaAs Power FET.
  • Class A or Class AB Operation.
  • Typical 16.5 dB Gain.
  • 5V to 10V Operation.

📥 Download Datasheet

Datasheet Details

Part number HWL30YRA
Manufacturer Hexawave
File Size 86.62 KB
Description L-Band GaAs Power FET
Datasheet download datasheet HWL30YRA Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HWL30NC L-Band Power FET Non-Via Hole Aimtron Technology
HWL30NPA L-Band GaAs Power FET ETC
HWL34YRA L-Band GaAs Power FET ETC
HWL36YRA L-Band GaAs Power FET ETC
HWL26YC L-Band Power FET Via Hole Chip ETC

Other Datasheets by Hexawave

Part Number Description
HWL34YRF L-Band GaAs Power FET
HWL23NPB L-Band GaAS Power FET
HWL26NPB L-Band GaAs Power FET
HWL27YRA L-Band GaAs Power FET

Full PDF Text Transcription

Click to expand full text
Features • Low Cost GaAs Power FET • Class A or Class AB Operation • Typical 16.5 dB Gain • 5V to 10V Operation Description The HWL30YRA is a Medium Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package. HWL30YRA L-Band GaAs Power FET Autumn 2002 V1 Outline Dimensions Absolute Maximum Ratings VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current IG Gate Current TCH Channel Temperature TSTG PT* Storage Temperature Power Dissipation * mounted on an infinite heat sink.
Published: |