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HWL27YRA - L-Band GaAs Power FET

Description

The HWL27YRA is a Medium Power GaAs FET designed for various L-band & S-band applications.

It is presently offered in low cost ceramic package.

Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Sto

Features

  • Low Cost GaAs Power FET.
  • Class A or Class AB Operation.
  • Greater than 17 dB Gain.
  • 5V to 10V Operation.

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Datasheet Details

Part number HWL27YRA
Manufacturer Hexawave
File Size 88.08 KB
Description L-Band GaAs Power FET
Datasheet download datasheet HWL27YRA Datasheet

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Full PDF Text Transcription

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Features • Low Cost GaAs Power FET • Class A or Class AB Operation • Greater than 17 dB Gain • 5V to 10V Operation Description The HWL27YRA is a Medium Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package. Absolute Maximum Ratings VDS VGS ID IG TCH TSTG PT* Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation * mounted on an infinite heat sink +15V -5V IDSS 2mA 175°C -65 to +175°C 3.
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