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HWL26NPB - L-Band GaAs Power FET

Description

The HWL26NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications.

It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.

Features

  • Plastic Packaged GaAs Power FET.
  • Suitable for Commercial Wireless.

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Datasheet Details

Part number HWL26NPB
Manufacturer Hexawave
File Size 103.69 KB
Description L-Band GaAs Power FET
Datasheet download datasheet HWL26NPB Datasheet

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Full PDF Text Transcription

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Features • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Applications • High Efficiency • 3V to 6V Operation Description The HWL26NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications. HWL26NPB L-Band GaAs Power FET Autumn 2002 V1 Outline Dimensions 1 23 Pin 1: Source Pin 2: Gate Pin 3: Drain Absolute Maximum Ratings VDS Drain to Source Voltage +7V VGS Gate to Source Voltage -5V ID Drain Current IG Gate Current IDSS 1mA TCH Channel Temperature 150°C TSTG Storage Temperature -65 to +150°C PT Power Dissipation 0.
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