Datasheet4U Logo Datasheet4U.com

HVV1214-100 - Power Transistor

Description

The high power HVV1214-100 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1200MHz to 1400MHz.

Features

  • Silicon MOSFET Technology.
  • Operation from 24V to 50V.
  • High Power Gain.
  • Extreme Ruggedness.
  • Internal Input and Output Matching.
  • Excellent Thermal Stability.
  • All Gold Bonding Scheme.

📥 Download Datasheet

Datasheet Details

Part number HVV1214-100
Manufacturer HVVi
File Size 726.92 KB
Description Power Transistor
Datasheet download datasheet HVV1214-100 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HVV1214-025 RF transistor ASI
HVV1011-035 RF transistor ASI
HVV1012-060 RF transistor ASI

Other Datasheets by HVVi

Part Number Description
HVV1214-025 Power Transistor
HVV1214-025S RF Transistor
HVV1214-075 RF Transistor
HVV1011-035 Power Transistor
HVV1011-300 Power Transistor

Full PDF Text Transcription

Click to expand full text
The innovative Semiconductor Company! HVV1214-100 High Voltage, High Ruggedness TM L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications Features • Silicon MOSFET Technology • Operation from 24V to 50V • High Power Gain • Extreme Ruggedness • Internal Input and Output Matching • Excellent Thermal Stability • All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the L-Band including G-DME,A-DME, IFF, TCAS and Mode-S applications.
Published: |