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DESCRIPTION
The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating at frequencies of 1030 MHz and 1090 MHz.
PACKAGE
FEATURES
High Power Gain Excellent Ruggedness 50V Supply Voltage
ABSOLUTE MAXIMUM RATINGS
Symbol VDSS VGS IDSX PD2 TS
TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Storage Temperature
Junction Temperature
Value 95
-10, 10 2
116 -65 to +150
200
Unit V V A W °C
°C
THERMAL CHARACTERISTICS
Symbol Parameter
1 JC
Thermal Resistance
Max 1.5
Unit °C/W
The device resides in the SM200 surface mount package with a ceramic lid.
HVV1011-035 Datasheet
