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HVV1012-250 - Power Transistor

Description

The high power HVV1012-250 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1025MHz to 1150MHz.

Features

  • Silicon MOSFET Technology.
  • Operation from 24V to 50V.
  • High Power Gain.
  • Extreme Ruggedness.
  • Internal Input and Output Matching.
  • Excellent Thermal Stability.
  • All Gold Bonding Scheme.

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Datasheet Details

Part number HVV1012-250
Manufacturer HVVi
File Size 629.33 KB
Description Power Transistor
Datasheet download datasheet HVV1012-250 Datasheet

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Full PDF Text Transcription

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The innovative Semiconductor Company! HVV1012-250 High Voltage, High Ruggedness TM L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications Features • Silicon MOSFET Technology • Operation from 24V to 50V • High Power Gain • Extreme Ruggedness • Internal Input and Output Matching • Excellent Thermal Stability • All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the L-Band including Airborne DME, IFF, TCAS and Mode-S applications. MODE FREQUENCY (MHz) VDD (V) IDQ Power GAIN EFFICIENCY IRL (mA) (W) (dB) (%) (dB) Class AB 1150 50 100 250 19.
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