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25 Watts, 50V, 1200-1400MHz
200!s, 10% Duty
DESCRIPTION
The high power HVV1214-025 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed radar applications operating over the frequency range of 1200 MHz and 1400 MHz.
FEATURES
High Power Gain Excellent Ruggedness 50V Supply Voltage
ABSOLUTE MAXIMUM RATINGS
Symbol VDSS VGS IDSX PD2 TS
TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Storage Temperature
Junction Temperature
Value 95
-10, 10 2
116 -65 to +150
200
Unit V V A W °C
°C
THERMAL CHARACTERISTICS
Symbol Parameter
1 JC
Thermal Resistance
Max 1.5
Unit °C/W
PACKAGE
The device resides in the SM200 surface mount package with a ceramic lid.
HVV1214-025 Datasheet
