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HVV1214-025S - RF Transistor

Description

The high power HVV1214-25 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2 GHz to 1.4 GHz.

Features

  • High Power Gain.
  • Excellent Ruggedness.
  • 48V Supply Voltage.

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Datasheet Details

Part number HVV1214-025S
Manufacturer HVVi
File Size 221.77 KB
Description RF Transistor
Datasheet download datasheet HVV1214-025S Datasheet

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Full PDF Text Transcription

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HVV1214-025 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty The innovative Semiconductor Company! DESCRIPTION The high power HVV1214-25 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2 GHz to 1.4 GHz. FEATURES • High Power Gain • Excellent Ruggedness • 48V Supply Voltage ABSOLUTE MAXIMUM RATINGS Symbol VDSS VGS IDSX PD2 TS TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Storage Temperature Junction Temperature Value 105 10 2 116 -65 to +200 200 Unit V V A W °C °C THERMAL CHARACTERISTICS Symbol Parameter θJC1 Thermal Resistance Max 1.
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