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HYG170ND03LA1S - Dual N-Channel Enhancement Mode MOSFET

Description

SOP8L Applications Switching Application Power Management for DC/DC Battery Protection Ordering and Marking Information S G170ND03L XXXYWXXXXX Dual N-Channel MOSFET Package Code S: SOP8L Date Code XXXYWXXXXX Note:HUAYI lead-free products contain molding compounds/die attach mat

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Datasheet Details

Part number HYG170ND03LA1S
Manufacturer HUAYI
File Size 859.00 KB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG170ND03LA1S Datasheet

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Full PDF Text Transcription

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HYG170ND03LA1S Dual N-Channel Enhancement Mode MOSFET Feature  30V/9A RDS(ON)= 14.5 mΩ(typ.)@VGS = 10V RDS(ON)= 19.7 mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description SOP8L Applications  Switching Application  Power Management for DC/DC  Battery Protection Ordering and Marking Information S G170ND03L XXXYWXXXXX Dual N-Channel MOSFET Package Code S: SOP8L Date Code XXXYWXXXXX Note:HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNationfinish;which are fully compliant with RoHS.HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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