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HYG170ND03LA1C1 - Dual N-Channel Enhancement Mode MOSFET

Description

D2 D2 D1 D1 D1 D1 D2 D2 D1 D2 Pin1 S2 G2 S1 G1 G1 S1 G2 S2 DFN3 3-8L Applications Switching Application Power Management for DC/DC Battery Protection Ordering and Marking Information C1 G170ND03 XYWXXXXXX Dual N-Channel MOSFET Package Code C1: DFN3 3-8L Date Code

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Datasheet Details

Part number HYG170ND03LA1C1
Manufacturer HUAYI
File Size 837.62 KB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG170ND03LA1C1 Datasheet

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Full PDF Text Transcription

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HYG170ND03LA1C1 Dual N-Channel Enhancement Mode MOSFET Feature  30V/24A RDS(ON)= 15.6 mΩ(typ) @VGS = 10V RDS(ON)= 20.5 mΩ(typ) @VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description D2 D2 D1 D1 D1 D1 D2 D2 D1 D2 Pin1 S2 G2 S1 G1 G1 S1 G2 S2 DFN3*3-8L Applications  Switching Application  Power Management for DC/DC  Battery Protection Ordering and Marking Information C1 G170ND03 XYWXXXXXX Dual N-Channel MOSFET Package Code C1: DFN3*3-8L Date Code XYWXXXXXX Note:HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNationfinish;which are fully compliant with RoHS.
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