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HYG180N10LS1D - N-Channel Enhancement Mode MOSFET

Description

TO-252-2L Applications High Frequency Point-of-Load Synchronous Buck Converter Ordering and Marking Information Single N-Channel MOSFET D G180N10 XYMXXXXXX Package Code D: TO-252-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100%

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Datasheet Details

Part number HYG180N10LS1D
Manufacturer HOOYI
File Size 1.46 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG180N10LS1D Datasheet

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Full PDF Text Transcription

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HYG180N10LS1D Single N-Channel Enhancement Mode MOSFET Feature  100V/45A RDS(ON)= 16mΩ (typ.) @ VGS = 10V RDS(ON)= 24mΩ (typ.) @ VGS = 6V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available (RoHS Compliant) Pin Description TO-252-2L Applications  High Frequency Point-of-Load Synchronous Buck Converter Ordering and Marking Information Single N-Channel MOSFET D G180N10 XYMXXXXXX Package Code D: TO-252-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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