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HYG110N03LR1S - N-Channel Enhancement Mode MOSFET

Description

SOP8L Applications z Power Management for DC/DC z Switching Application z Battery Protection Ordering and Marking Information S G110N03 XYMXXXXXX N-Channel MOSFET Package Code S: SOP8L Date Code XYMXXXXXX Note:HUAYI lead-free products contain molding compounds/die attach materials and 100% matte

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Datasheet Details

Part number HYG110N03LR1S
Manufacturer HUAYI
File Size 863.43 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG110N03LR1S Datasheet

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Full PDF Text Transcription

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HYG110N03LR1S N-Channel Enhancement Mode MOSFET Feature z 30V/10A RDS(ON)=8.5mΩ(typ.) @VGS = 10V RDS(ON)=12.5 mΩ(typ.) @VGS = 4.5V z 100% Avalanche Tested z Reliable and Rugged z Halogen Free and Green Devices Available (RoHS Compliant) Pin Description SOP8L Applications z Power Management for DC/DC z Switching Application z Battery Protection Ordering and Marking Information S G110N03 XYMXXXXXX N-Channel MOSFET Package Code S: SOP8L Date Code XYMXXXXXX Note:HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNationfinish;which are fully compliant with RoHS.HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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