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SFX6N60 - 600V N-CHANNEL MOSFET

Download the SFX6N60 datasheet PDF. This datasheet also covers the SFX6N60-HI variant, as both devices belong to the same 600v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology.

Key Features

  • 6A,600V,RDS(on(typ)=1.35@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SFX6N60-HI-SEMICON.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SFX6N60
Manufacturer HI-SEMICON
File Size 608.69 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SFX6N60 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SFX6N60 6A 600V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology FEATURES ◆ 6A,600V,RDS(on(typ)=1.35@VGS=10V ◆ Low gate charge ◆ Low Crss ◆ Fast switching ◆ Improved dv/dt capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3.Source TO-251J-3L TO-252-2L TO-220F-3L ORDERING INFORMATION Part No.