SFX4N65
Description
This power mosfet is an N-channel enhancement mode power MOS field effect transistor which is produced using Hi-semicon proprietary F-CellTM structure VDMOS technology.
Key Features
- VDS(V)=650V, ID=4A
- RDS(ON) TYP:2.3Ω@VGS=10V ID=2A MAX:2.7Ω
Applications
- Switched mode power supplies (SMPS)
