SFX20N60 Datasheet | HI-SEMICON

DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features - VDS(V)=600V, ID=20A - RDS(ON) TYP:0.32Ω@VGS=10V ID=10A MAX:0.4Ω Applications - Power faction correction (PFC) - Switched mode power supplies (SMPS) - Uninterruptible power supply (UPS) - LED lighting power ORDERING INFORMATION Part No. SFF20N60 SFP20N60 Package TO-220F-3L TO-220-3L Marking SFF20N60 SFP20N60 Http://.hi-semicon. Material Pb free Pb free Packing Tube Tube Rev 1.1 Page 1 of 9 ABSOLUTE MAXIMUM RATINGS (TJ=25C unless otherwise...