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SFX20N60 - 600V N-CHANNEL POWER MOSFET

Download the SFX20N60 datasheet PDF. This datasheet also covers the SFX20N60-HI variant, as both devices belong to the same 600v n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology.

Key Features

  • VDS(V)=600V, ID=20A.
  • RDS(ON) TYP:0.32Ω@VGS=10V ID=10A MAX:0.4Ω.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SFX20N60-HI-SEMICON.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SFX20N60
Manufacturer HI-SEMICON
File Size 750.57 KB
Description 600V N-CHANNEL POWER MOSFET
Datasheet download datasheet SFX20N60 Datasheet

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Other Datasheets by HI-SEMICON

Part Number Description
SFX18N50 500V N-CHANNEL MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
20A, 600V N-CHANNEL POWER MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features ◆VDS(V)=600V, ID=20A ◆RDS(ON) TYP:0.32Ω@VGS=10V ID=10A MAX:0.