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HM7N65F - 650V N-Channel MOSFET

This page provides the datasheet information for the HM7N65F, a member of the HM7N65 650V N-Channel MOSFET family.

Datasheet Summary

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

Features

  • 7.0A, 650V, RDS(on) = 1.26Ω @VGS = 10 V.
  • Low gate charge ( typical 29nC).
  • High ruggedness.
  • Fast wsitching.
  • 100% avalanche tested.
  • Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
  • ◀▲ {G.
  • {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Ga.

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Datasheet preview – HM7N65F

Datasheet Details

Part number HM7N65F
Manufacturer H&M Semiconductor
File Size 560.54 KB
Description 650V N-Channel MOSFET
Datasheet download datasheet HM7N65F Datasheet
Additional preview pages of the HM7N65F datasheet.

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Full PDF Text Transcription

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HM7N65 / HM7N65F HM7N65 / HM7N65F 650V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br idge topology. Features • 7.0A, 650V, RDS(on) = 1.
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