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HM730F - 400V N-Channel MOSFET

This page provides the datasheet information for the HM730F, a member of the HM730 400V N-Channel MOSFET family.

Datasheet Summary

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 6.0A, 400V, RDS(on) = 1.00Ω @VGS = 10 V.
  • Low gate charge ( typical 18nC).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
  • ◀▲ {G.
  • {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Si.

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Datasheet preview – HM730F

Datasheet Details

Part number HM730F
Manufacturer H&M semi
File Size 296.89 KB
Description 400V N-Channel MOSFET
Datasheet download datasheet HM730F Datasheet
Additional preview pages of the HM730F datasheet.

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Full PDF Text Transcription

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HM730 / HM730F 400V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 6.0A, 400V, RDS(on) = 1.
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