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HM7N80 - 800V N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 7.0A, 800V, RDS(on) = 1.90Ω @VGS = 10 V.
  • Low gate charge ( typical 27nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability GDS TO-220 GD S TO-220F {.
  • ◀▲ {.
  • { Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-.

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Datasheet Details

Part number HM7N80
Manufacturer H&M Semiconductor
File Size 304.82 KB
Description 800V N-Channel MOSFET
Datasheet download datasheet HM7N80 Datasheet
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Full PDF Text Transcription

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HM7N80 / HM7N80F HM7N80 / HM7N80F 800V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 7.0A, 800V, RDS(on) = 1.
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