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HM6604 - N & P-Channel Enhancement Mode Power MOSFET

Description

The HM6604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Features

  • N-Channel VDS = 20V,ID =3A RDS(ON) < 65mΩ @ VGS=4.5V RDS(ON) < 90mΩ @ VGS=2.5V.
  • P-Channel VDS = -20V,ID = -3A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 140mΩ @ VGS=-2.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package N-channel P-channel Marking and pin Assignment Package Marking and Ordering Information SOT-23-6L top view Device Marking Device Device Package Reel Size Tape width 20.
  • HM6604 SOT-23-6L Ø180.

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Datasheet preview – HM6604

Datasheet Details

Part number HM6604
Manufacturer H&M Semiconductor
File Size 489.24 KB
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM6604 Datasheet
Additional preview pages of the HM6604 datasheet.

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Full PDF Text Transcription

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HM6604 N and P-Channel Enhancement Mode Power MOSFET Description The HM6604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 20V,ID =3A RDS(ON) < 65mΩ @ VGS=4.5V RDS(ON) < 90mΩ @ VGS=2.5V ● P-Channel VDS = -20V,ID = -3A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 140mΩ @ VGS=-2.
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