HM60N02 - MOSFET

H&M Semiconductor

General Description

The HM60N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =20V,ID =60A RDS(ON).

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HM60N02 mosfet by H&M Semiconductor - Datasheet Preview

Datasheet Details

Part number	HM60N02
Manufacturer	H&M Semiconductor
File Size	488.30 KB
Description	MOSFET
Datasheet	HM60N02 Datasheet

Other Datasheets by H&M Semiconductor

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HM60N02K	MOSFET
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HM60N03D	N-Channel Enhancement Mode Power MOSFET
HM60N03K	N-Channel Enhancement Mode Power MOSFET
HM60N04	N-Channel Enhancement Mode Power MOSFET
HM60N04K	N-Channel Enhancement Mode Power MOSFET
HM60N05	N-Channel Enhancement Mode Power MOSFET
HM60N05K	N-Channel Enhancement Mode Power MOSFET
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HM60N06K	MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM60N02 Description The HM60N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =60A RDS(ON) <8mΩ @ VGS=4.