HM609K
Description
The HM609K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
N channel
- VDS =40V,ID = 30A RDS(ON) <16mΩ @ VGS=10V RDS(ON) <24mΩ @ VGS=4.5V p channel
- VDS =-40V,ID =-18A RDS(ON) <45mΩ @ VGS=-10V RDS(ON) <65mΩ @ VGS=-4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Application
- H-bridge
- Inverters
Schematic diagram
Marking and pin assignment
100% UIS TESTED! 100% ∆Vds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
TO-252-4L
Reel Size
- Tape width
- Quantity
- Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
N-Channel P-Channel
Drain-Source...
