HM603K
Description
The HM603K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
N channel
- VDS =60V,ID =20A RDS(ON) <30mΩ @ VGS=10V RDS(ON) <35mΩ @ VGS=4.5V p channel
- VDS =-60V,ID =-15A RDS(ON) <85mΩ @ VGS=-10V RDS(ON) <135mΩ @ VGS=-4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Application
- H-bridge
- Inverters
HM.
Schematic diagram
HM.
Marking and pin assignment
100% UIS TESTED! 100% ∆Vds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
TO-252-4L
Reel Size
Tape width
Quantity
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
N-Channel P-Channel
Drain-Source Voltage
-60
Gate-...
