HM6401 - P-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

Part number	HM6401
Manufacturer	H&M Semiconductor
File Size	750.65 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM6401 Datasheet
Additional preview pages of the HM6401 datasheet.

The HM6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS = -30V,ID = -5.0A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.5V RDS(ON) < 65mΩ @ VGS=-10V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package D G S Schematic diagram Marking and pin Assignment.

📁 Similar Datasheet

HM64 - PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HM64YLB36514 - 16M Synchronous Late Write Fast Static RAM (Renesas Technology)
HM6-6617B883 - 2K x 8 CMOS PROM (Intersil Corporation)
HM6-6642-9 - 512 x 8 CMOS PROM (Intersil Corporation)
HM6-6642B-9 - 512 x 8 CMOS PROM (Intersil Corporation)
HM60 - PRECISION METAL FILM RESISTORS (RCD)
HM6116 - 2048-word X 8bit High Speed CMOS Static RAM (Hitachi Semiconductor)
HM6116 - 2K x 8 GENERAL PURPOSE CMOS SRAM (MHS)

Other Datasheets by H&M Semiconductor

Published: Nov 27, 2018 |