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HM3407A - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM3407A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -30V,ID = -4.1A RDS(ON) < 90mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package D G S Schematic diagram 3407A Marking and pin Assignment.

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Datasheet Details

Part number HM3407A
Manufacturer H&M Semiconductor
File Size 411.76 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM3407A Datasheet
Additional preview pages of the HM3407A datasheet.

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Full PDF Text Transcription

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HM3407A P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3407A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -4.1A RDS(ON) < 90mΩ @ VGS=-4.
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