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HM3400B - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The +03400% uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V D G S Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Marking and pin Assignment.

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Datasheet preview – HM3400B

Datasheet Details

Part number HM3400B
Manufacturer H&M Semiconductor
File Size 231.88 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM3400B Datasheet
Additional preview pages of the HM3400B datasheet.

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Full PDF Text Transcription

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+03400% N-Channel Enhancement Mode Power MOSFET DESCRIPTION The +03400% uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.
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